19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming
Ki‐Tae Park, Jin-Man Han, Daehan Kim, Sang-Wan Nam, Kihwan Choi, Minsu Kim, Pansuk Kwak, Doo-Sub Lee, Yoon-He Choi, Kyung-Min Kang, Myung-Hoon Choi, Donghun Kwak, Hyun-wook Park, Sang-Won Shim, Hyun-Jun Yoon, Doo-Hyun Kim, Sang-won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim · 2014
In the past few years, various 3D NAND Flash memories have been demonstrated, from device feasibility to chip implementation, to overcome scaling challenges in conventional planar NAND Flash [1-3]. The difficulties include shrinking the NAND cell and increasing manufacturing costs due to quadruple patterning and extreme ultraviolet lithography, motivating the development of the next-generation node beyond 16nm-class NAND Flash [4]. In this paper, as a new 3D memory device with lower manufacturing cost and superior device scalability, we present a true 3D 128Gb 2b/cell vertical-NAND (V-NAND) Flash. The chip accomplishes 50MB/s write throughput with 3K endurance for typical embedded applications such as mobile and personal computer. Also, extended endurance of 35K is achieved with 33MB/s of write throughput for data center and enterprise SSD applications.