A Study on the High Integrated 1TC SONOS Flash Memory
Joo Yeon Kim, Byeong Chel Kim, Kwang Yell Seo · Journal of the Korean Institute of Electrical and Electronic Material Engineers · 2003
To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35 $\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34 ${\AA}$ , nitride of 73 ${\AA}$ and blocking oxide of 34 ${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.