Patents [Three-electrode circuit element utilizing semiconductive materials - US Patent No. 2,524,035]
IEEE Solid-State Circuits Society Newsletter · 2007
Reproduces two pages from John Bardeen and Walter Brattain's US Patent No. 2,524,035 of Oct. 1950 for invention the point-contact transistor, made with germanium: the first page of diagrams and the first page of claims.