A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform
L. C. Lin, E. R. Hsieh, T. C. Kao, M. Y. Lee, J. K. Chang, Jingjing Guo, Steve Shao-Shiun Chung, T. P. Chen, Su-Ling Huang, T. J. Chen, O. Cheng · 2022
For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.