Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling
Devin Verreck, Antonio Arreghini, F. Schanovsky, G. Rzepa, Zlatan Stanojević, F. Mitterbauer, Christian Kernstock, O. Baumgartner, Markus B. Karner, Geert Van den Bosch, M. Rosmeulen · 2021
We present a physical modeling approach that explains the non-ideal ISPP slope in charge trap layer (CTL) flash memory and its impact on 3-D NAND vertical pitch scaling. First, we derive an expression for the VTchange rate and use its field dependence to reproduce experimental vertical NAND ISPP slopes. Next, we implement a 2.5-D TCAD model based on these insights and show significant program voltage increase (>5V) in realistic 3-D NAND flash devices with scaling vertical pitch (down to 10nm). Finally, we evaluate high-k CTL and airgaps as mitigation measures at scaled pitch.