A 6T SRAM Based Two-Dimensional Configurable Challenge-Response PUF for Portable Devices
Lu Lu, Taegeun Yoo, Tony Tae-Hyoung Kim · IEEE Transactions on Circuits and Systems I Regular Papers · 2022
This work proposes a 2-dimensional programable SRAM-based PUF. The selection of challenge groups, orders, and sequence lengths dominates the responses with challenge-response pairs (CRPs) by order of rows$^{\mathrm {(sequence~\textrm {}length- 1)}} \times $columns$^{\mathrm {(sequence~\textrm {}length - 1)}}$. The PUF bit cell has split word-lines with vertical and horizontal connections, the bit-lines are placed orthogonally to generate one-bit data with four cells, the entropy source is enriched to 24 transistors. The proposed PUF supports multiple data maps from a single chip. A test chip was fabricated in 65 nm CMOS technology. Under 0.8V and 20 °C (nominal point), the bit error rate reaches 3%. In a single chip, the hamming distance achieves 42.49% within the same group and different orders of challenges, and 47.32% within the different groups of challenges (when the sequence length is 5). The measured inter-hamming distance between chips is improved to 49.47%.