Highly Reliable Cell Characteristics with CSOB(Channel-hole Sidewall ONO Butting) Scheme for 7th Generation 3D-NAND
Jin-Kyu Kang, Jaeduk Lee, Yong-Sik Yim, Sejun Park, Hyun‐Suk Kim, Eun Suk Cho, Taehun Kim, Jung Hoon Lee, Joon Kim, Raeyoung Lee, Junhee Lim, Sung‐Hoi Hur, Su Jin Ahn, Jaihyuk Song · 2021
Architecture change from BCS (Body Contact Spacer) scheme to CSOB (Channel-hole Sidewall ONO Butting) scheme for the 7th-generation 3D-NAND flash memory is discussed, which has been driven to adopt COP (Cell Over Peripheral circuits) scheme. Device considerations, such as cell-to-cell interference, cell current, and charge loss in the 7th-generation 3D-NAND are reviewed and solutions are suggested that lead to the world smallest unit cell volume in flash memory.