Technology Development
Raminderpal Singh, David L. Harame, Modest M. Oprysko · 2003
Chapter 1 provides a detailed description of IBM's Silicon Germanium BiCMOS technology development program. This family of technologies provides high-performance SiGe HBTs combined with advanced CMOS enablement, and a variety of advanced passive devices critical for realizing an integrated AMS SoCs. The technologies have been utilized by internal and external customers through IBM's foundry offerings to produce ICs in a wide-ranging variety of applications – as discussed throughout the book. This chapter also reviews the IBM process development and integration methodologies, as well as the device characteristics. The discussions described how the development and device selection was geared towards usage in mixed-signal IC development. Key points brought out in this chapter include: The development of active devices, namely NPN bipolars and FETs. The development of advanced passive devices – such as resistors, capacitors, and inductors – as well as ESD protection devices. Overview of many of the issues in process integration, including manufacturing – namely predictability, reliability, and yield. Discussion of the technology implications of the different implementation choices.