Vertical and lateral charge losses during short time retention in 3-D NAND flash memory
Yongwoo Lee, Jinsu Yoon, Kwangmin Lim, Bongsik Choi, Geon-Hwi Park, Ju Won Jeon, Jong‐Ho Bae, Dong Myong Kim, Dae Hwan Kim, Eunmee Kwon, Sung‐Jin Choi · 2021
A fast charge loss during short time retention operation was observed in word-line stacked 3-D NAND flash memory, and the origin of the fast charge loss was comprehensively evaluated. Using a fast-response pulse I-V system, the fast charge loss behaviors from lateral and vertical migration of trapped charges were thoroughly investigated and measured at various program/erase levels and temperatures in solid and checkerboard pattern.