Hall Devices Realised in the MOS Technology
George Căruntu · Analele Universităţii Maritime Constanţa · 2010
This paper presents the structure, the operating conditions and the main features of some microsensors realised in the MOS integrated circuits technology. By using numerical simulation, the values of the sensor response for the two analysed devices are compared. It is also emphasized the way in which choosing the geometry and the material features allows getting high-performance sensors.