Analysis of Optimum Impedance for X-Band GaN HEMT using Load-Pull
Minsoo Kim, Young-Chul Rhee · The Journal of the Korea institute of electronic communication sciences · 2011
In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed =33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed =35.91dBm, PAE=69.23%, Gain=14.87dBm.