Industry's First 7.2 Gbps 512GB DDR5 Module
Sung Joo Park, Jonghoon J. Kim, Kun Joo, Youngho Lee, Kyoungsun Kim, Young‐Tae Kim, Woo-Jin Na, Ikjoon Choi, Hye-Seung Yu, Wonyoung Kim, Juyeon Jung, Jaejun Lee, Dohyung Kim, Young-Uk Chang, Gong Heum Han, Hangi Jung, Sunwon Kang, Jeong‐Hyeon Cho, Hoyoung Song, Tae-Young Oh · 2021
Spurred by the increasing market needs for big data and cloud services, global server suppliers and hyper- scalers are looking to adopt high-speed and large-capacity memory modules. To fulfill this trend, the brand- new low-voltage operable DDR5 (double data rate 5th generation) memory can be an appropriate solution, with the highest speed of 7.2 Gbps and the largest capacity of 512 GB. However, some critical obstacles, such as increased capacity and high-speed I/O requirements, unstable power noise occurrences, high power consumption, and increase in operating temperature, must be overcome. This poster will cover various technical pathfinding solutions for world's first DDR5 512 GB module with an advanced DRAM process and I/O schemes, package technology, and module architecture regarding improvements in the following four aspects: performance, speed, capacity, and power. This will unveil the industry's first high-performance and large-capacity memory product with 8-stacked DDR5 DRAMs. Samsung believes that this product will pave the way for achieving both higher bandwidth and lower power consumption to inaugurate the era of terabyte DRAM modules for next-gen servers.