Highly-Reliable Cell Characteristics with 128-Layer Single-Stack 3D-NAND Flash Memory
Sejun Park, Jae-Duk Lee, Jae Hoon Jang, Jong Kwang Lim, Hyunjung Kim, Jae Joo Shim, Min-Tai Yu, Jin-Kyu Kang, Su Jin Ahn, Jaihyuk Song · Symposium on VLSI Technology · 2021
An industry leading 128-layer single-stack 3D-NAND Flash memory with high reliability cell characteristics is successfully developed for the first time. Single-stack etching of 128 layers brings about various deformation of hole profile, which leads to the degradation of cell characteristics. The degradation of cell characteristics has been overcome by advanced HARC (high-aspect ratio contact) etching process and ONO material engineering. The single-stack NAND Flash memory still has a potential to be developed further with the advanced single-stack technology.