New Read Schemes to Reduce Read Disturbance Due to HCI in Full Boosting Channel 3-D NAND Flash Memories
Hyungjun Jo, Hyungcheol Shin · IEEE Silicon Nanoelectronics Workshop · 2021
The read disturbance due to the hot carrier injection (HCI) in full boosting channel 3-D NAND flash memories is investigated through the TCAD device simulation. Also, influences of the spacer length (L SP ), the word-line (WL) length (L WL ), and the neighbor WL read voltage (V Nei ) on the read disturbance are investigated. Finally, we propose new read schemes to reduce the read disturbance.