A 1 Tb 4b/cell 5th-Generation 3D-NAND Flash Memory with 2ms tPROG, 110us tR and 1.2Gb/s/pin Interface
Doo-Hyun Kim · 2021
In this paper, 1Tb 4b/cell NAND flash memory successfully developed and manufactured using 92 stacked WLs is presented. The chip achieved 7.53 Gb/mm2of areal density with 18 MB/s program throughput, tR=110μs and 1.2Gb/s IO speed. The chip size of it is reduced by 25% over the previous work [5] and, also became the fastest chip as the program and read performance are enhanced by 33% and 24%, respectively by extremely improving cell characteristics with same reliability criteria. In the following, schemes for reducing program time as well as improving reliability by extreme extent are presented. The improvement in all key parameters is because the disadvantage by multi-stack is overcome by the application of the reliability and performance enhancing schemes.