pn Junction Characteristic of AlGaInP DH-LED
Da Peng Gao · Chinese Journal of Luminescence · 2013
The pn junction characteristics of AlGaInP DH-LED was analyzed by using Matlab simulation.The relationship of current density J and voltage V at certain temperature(300 K) was obtained.Under low voltage,the current density increases linearly with the voltage.When the voltage increases to a certain value,the current density increases in logarithmic pattern.When the voltage is too high,the current density does not increase with the voltage.With the increase of voltage,the Joule heat of the device,and affect the device characteristics,and finally shorten the LED life.Comprehensive consideration,the theory of optimal driving voltage range finally load at 2 ~ 2.33 V.The research results provide theoretical reference and guidance for the design of LED array integrated device.