On Approach to Increase Integration Rate of Elements of a Current Source Circuit
Evgeny Leonidovich Pankratov · 2020
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.Framework the approach, we consider a heterostructure with special configuration. Several specificareas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.