An Adaptive Double Area Page Replacement Algorithm for NAND Flash
Jiatong Li, Huaixiang Hu · Journal of Physics Conference Series · 2021
Abstract In order to improve the hit rate of memory pages and prolong the service life of flash memo ry, an adaptive double area page replacement algorithm is proposed. The buffer is divided into page area and page cluster area. The initial size o f each area is set. The size of the area is dynamically changed according to the number of page hits in the two areas. The replacement unit of the page area is a single page. The CCF-LRU algorithm is used in page area replacement policy. When the page in the page area needs to be replaced, the rep laced page is put into the page cluster area. The replacement unit of page cluster area is the whole page cluster. When the page area cluster needs to be replaced, the dirty memory pages in the page cluster are divided into small memo ry pages with the same size as the flash memory pages, and only the dirty small memory pages are written back. According to the analysis of experimental results, compared with CF-LRU, CCF-LRU and FAB, the hit rate is increased by 9%, 8% and 11% respectively