Comprehensive Investigations on Data Pattern Dependences in Charge-trap (CT) 3D NAND Flash Memory
Yachen Kong, Xueyang Peng, Fei Wang, Menghua Jia, Xuepeng Zhan, Yuan Li, Jiezhi Chen · 2020
Data pattern impacts on the error bits' generations in charge-trap (CT) 3D NAND flash memory are studied systematically by the NAND chip tester. Similar to the inter-cell-interference casued data pattern dependence in its 2D counterpart, data pattern dependences still exist in 3D NAND chip, which turns to be more serious after P/E cycling. The underlying mechanism originates from the lateral charge migration (LCM) in the common CT layer, which can be well evidenced by TCAD simulations. Our results could guide the design of coding approaches to enhance the reliability of 3D NAND flash based storages with correlated data patterns.