METHODS OF THE GAUGES BASED ON THE MAGNETOSENSITIVE TRANSISTOR STRUCTURE CHARACTERITIC STABILIZATION
М. А. Глауберман, Я. І. Лепіх, А. П. Балабан, П. О. Снігур · Sensor Electronics and Microsystem Technologies · 2020
The paper presents the results of a study of methods for stabilizing the characteristics of gauges based on magnetosensitive transistor structures under the influence of temperature. The problem is not only that the temperature directly affects the material, what show up, in particular, in the nature of the charge carrier transfer, but also that the heat dissipation from the semiconductor material in the device when using thermostatic or shielding elements is not always effective, complicates the construction as a whole and leads to an increase in the product mass and dimensions. Temperature dependences of MTS electrophysical characteristics were perfectly investigated and resulted, in particular, in [1]. In this paper, the task was to solve the problem of the two-collector magnetosensitive transistor (DMT) structure parameter thermal stabilization by circuit method.