Methods for Threshold Voltage Setting of String Select Transistors in Channel Stacked NAND Flash Memory
김도빈 · Seoul National University Open Repository (Seoul National University) · 2017
Since recent mobile electronic devices such as tablets, laptops, smartphones, or solid-state drives (SSDs) have started to adopt the NAND flash memory as their main data storage device, the demand for low-cost and high-density NAND flash iii targeted Vths values are introduced and verified by using technology computeraided design (TCAD) simulations and measurements in fabricated pseudo-SLSM.Furthermore, various disturbance phenomena that could occur during basic memory operations such as erase, program, and read are analyzed, and schemes for mitigating these disturbances are proposed and verified.