Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon

Branislav Radjenović, Marija Radmilović-Radjenović · 2007

In this paper we have shown that profile evolution during anisotropic wet etching of silicon can be described by the non-convex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Angular dependence of the silicon etching rate is determined on the basis of the silicon crystal symmetry properties. Key-Words: Hamilton-Jacobi equation, non-convex Hamiltonian, level set method, wet etching, silicon, MEMS, profile evolution

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