Nano-artifact metrics based on random collapse of resist
Tsutomu Matsumoto, Morihisa Hoga, Morihisa Hoga, Yasuyuki Ohyagi, Mikio Ishikawa, Makoto Naruse, Kenta Hanaki, Suzuki, Ryosuke, Daiki Sekiguchi, Naoya Tate, Motoichi Ohtsu · Institutional Repositories DataBase (IRDB) · 2014
Artifact metrics is an information security technology that uses the intrinsic characteristics of a physicalobject for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on siliconnanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beamlithography. The proposed technique uses conventional and scalable lithography processes, and because ofthe random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimumdimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluatingfalse match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based onresist collapse satisfy the requirements for high-performance security applications.