Measurement and Compact Modeling of Noise Characteristics in Complementary Junction Field-Effect Transistors
Alexandr M. Pilipenko, Цветков Федор Алексеевич, Nikolay Nikolayevich Prokopenko · 2020
The noise of complementary junction field-effect transistors (JFETs) was measured in the frequency range from 1 Hz to 5 kHz for various static modes using the developed and verified hardware-software system on the base of National Instruments platform. The JFETs were developed by JSC "INTEGRAL" (Minsk, Belarus) using silicon BiJFET-technology on which the manufacture of more than 20 types of analog integrated circuits for various sensors and transducers is based. The Features of the complementary JFETs noise characteristics in various frequency bands of the measurement range are found. Parameter extraction and error estimation are realized for the compact SPICE-model of noise in the JFETs. The results of JFETs parameter extraction show a good correspondence of the measured characteristics to the compact SPICE-model of noise. The relative root-mean-square (RMS) error of compact modeling does not exceed 8%.