ELECTRONIC CHARACTERISTICS OF A QUENCHED MODE GUNN EFFECT OSCILLATOR.
Wen Tsuan Chen · Defense Technical Information Center (DTIC) · 1968
The electronic characteristics of a quenched mode Gunn effect oscillator has been studied both theoretically and experimentally. The theoretical work is based on a large signal analysis and a computer program is used to simulate the Gunn diode in a resonant circuit to predict the domain dynamics, the i-v characteristics and the overall electrical behavior of a quenched mode Gunn oscillator. Good agreement of this theory with many experimental observations is shown. A simple method for measuring the i-v characteristics and electronic admittance of an oscillating Gunn diode operating in a quenched mode is described. A P-shape i-v characteristic and admittance measurements show that the diode equivalent circuit is a series combination of a negative conductance in shunt with a capacitive susceptance and the impedance of the low-field region. The microwave performance of a quenched mode Gunn oscillator and the effect on this performance of varying the bias voltage and the external circuit loads have been investigated experimentally and the results are presented. (Author)