Statistical analysis of the 2N697 transistor response to neutron irradiation
Charles T. Self · Defense Technical Information Center (DTIC) · 1978
A statistical analysis was performed on transistors' dc gain h sub FE to determine the effects of neutron irradiation upon their population distribution. The 2N697 transistor was used for this analysis. One hundred transistors from three lots and two manufacturers constituted the test population. It was found that h sub FE measurements do not give enough information to make accurate predictions of the effect of neutron irradiation on population densities. It is recommended that the gain-bandwidth product also be a test parameter to insure accurate predictions. (Author)