Lateral bipolar junction transistor on a silicon photonics platform
Aashu Jha, Thomas Ferreira de Lima, Hooman Saeidi, Simon Bilodeau, Alexander N. Tait, Chaoran Huang, Siamak Abbaslou, Bhavin J. Shastri, Paul R. Prucnal · Optics Express · 2020
Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing, improving overall efficiency. We report a lateral bipolar junction transistor on a commercial silicon photonics foundry process. We achieved a DC current gain of 10 with a Darlington configuration, and using measured S-parameters for a single BJT, the available AC gain was at least 3dB for signal frequencies up to 1.1 GHz. Our single BJT demonstrated a transimpedance of 3.2mS/μm, which is about 70 times better than existing literature.