Electrical Performances of Insulated Gated Bipolar Transistor on Breakdown Voltage Corresponding to the Resulted Voltage due to the Applied Current Source
Hsin-Chia Yang, Kuo-Chin Lo, Hsiu-Hsien Yu, Chun-Yian Chang, Kun-Hong Liao, Yu-Jung Liao, Sung-Ching Chi · 2019
Insulated Gate Bipolar Transistor (IGBT) uniquely enjoys comparably high power due to high current gain, which utilizes various routes for gated-controlled currents to flow, especially on Bipolar-like currents. Therefore input impedance is expected to be rather high because of MOSFET-like gates, which apparently dominate the on/off status. Nevertheless, the high power devices terribly give the high consuming probing. The authors analyze and compare the measured electrical data using low power probe station to understand and determine the best known processes and the best structure, in which the trans-conductance, the swing, and “field contour distribution probing” are taken into account. The so-called “field contour distribution probing” is newly proposed to probe and see if the structure is competitive. Instead of a curve tracer, the instrument 4156C (Agilent) is used to serve low current source and the corresponding floating voltage is detected. A simple algorithm associated with capacitance may help explore the underlying field profile correlated with the leakage current and then the sustaining voltage (breakdown voltage).