Rethinking Last-level-cache Write-back Strategy for MLC STT-RAM Main Memory with Asymmetric Write Energy
Yu-Pei Liang, Tseng‐Yi Chen, Yuan-Hao Chang, Shuo-Han Chen, Pei‐Yu Chen, Wei‐Kuan Shih · 2019
To meet the requirement of low-power consumption, multi-level-cell STT-RAM (MLC STT-RAM) has been widely regarded as a potential candidate for replacing DRAM-based main memory in the next generation computer architectures because of its high memory cell density, fast read/write performance and zero refresh power consumption. However, MLC STT-RAM has higher power consumption than DRAM while a write operation is performed because MLC STT-RAM sometimes needs to perform a two-step transition to change the originally stored bits to another specifically written bit patterns. As a result, MLC STT-RAM has different power consumption while different bit patterns are written to a memory cell. To the best of our knowledge, a few or none of the previous studies rethink a cache replacement policy to overcome the asymmetric write energy issue of MLC STT-RAM-based main memory. Thus, this study proposes an energy-aware cache replacement policy, namely E-cache, which considers asymmetric write-back power consumption on MLC STT-RAM-based main memory to evict a proper cached data from the last-level cache, so as to minimize system power consumption. The experimental results show that the proposed solution reduces the energy consumption by 36% on average, compared with the LRU.