Rate-adaptive Polar Codes Design for MLC NAND Flash Memory
Jianhui Bian, Shengmei Zhao, Lingjun Kong · 2018
In this paper, rate-adaptive polar codes design based on memory cell bits' Bhattacharyya parameters to further improve the storage efficiency of multi-level cell (MLC) is proposed for NAND flash memory. The code design takes advantages of the inherent characteristics of MLC flash memory channel to iteratively calculate the bhattacharyya parameter of each memory cell bit, where the punctured positions are selected by choosing the bits with higher Bhattacharyya parameters to construct rate-adaptive polar codes. The experimental evaluations show that polar codes with code rate 0.8 punctured by the proposed method for MLC NAND flash memory channel can achieve 4.6 dB performance gain in bit error rate (BER) 8×10-5over the random puncturing codes.