Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation
Jaeyeol Park, Hyungcheol Shin · 2019
In this paper, we analyzed lateral migration mechanism of holes (LM) in 3D NAND Flash memory during retention operation. Retention characteristics were investigated using Technology Computer-Aided Design (TCAD) simulation and modeled using Weibull cumulative distribution function (WCD). Time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (Ea) of LM was extracted by applying to the Arrhenius equation.