Channel Stacked Array NAND Flash Memory With Vertically Stacked String Selection Line (SSL)
서주연 · Seoul National University Open Repository (Seoul National University) · 2012
memory cells featuring a GAA structure are less sensitive to the variation of the gate dimensions than cells featuring a DG structure.In Chapter 5, we investigate the cell characteristics with respect to physical dimensions of channel and gate experimentally.Poly-Si channel with GAA structure flash memory cells are successfully fabricated.