A 7-nm 6R6W Register File With Double-Pumped Read and Write Operations for High-Bandwidth Memory in Machine Learning and CPU Processors
Hoan Nguyen, Jihoon Jeong, Francois Atallah, Daniel J. Yingling, Keith A. Bowman · IEEE Solid-State Circuits Letters · 2018
A 7-nm register file (RF) with a 16-transistor (16T) 3-read and 3-write (3R3W) bitcell double pump or time multiplexes the read and write access ports twice per clock cycle to achieve 6-read and 6-write (6R6W) operations per cycle for high-bandwidth (BW) on-die memory in high-performance machine learning and CPU processors. From silicon test-chip measurements at 0.9 V, the double-pumped (DP) 6R6W RF trades off a 19% lower maximum clock frequency (FMAX) for 2× the number of read and write operations per cycle, resulting in a 62% higher memory BW compared to a conventional single-access (SA) 3R3W RF.