Improved Design of a Bandgap Voltage Referencewith High Accuracy
Xu Yong, Zhigong Wang, Yu Guan, Lu‐Feng Qiao, Fei Zhao · Journal of Semiconductors · 2006
A bandgap voltage reference based on the conventional architecture is optimized.The effects of the MOS device mismatch and the channel-length modulation are decreased by optimizing the design of the current mirror and controllingUDS.Better precision and a lower temperature coefficient are obtained.The average value of the output voltage is 1.23±0.02V,with a standard deviation (σ) of only 0.007V,for 200 chips that were measured.The average measured temperature coefficient is 16ppm/℃ in the range of -40 to 85℃,and the average power supply current is 100μA.The designed and measured values are well matched in this optimized architecture.