Effects of Grain Size on the Electrical Characteristics of Three-Dimensional NAND Flash Memory Devices
Jun Gyu Lee, Tae Whan Kim · Journal of Nanoscience and Nanotechnology · 2019
), and electron density of 3D NAND flash memory devices with randomly generated grain boundaries were investigated by using three-dimensional technology computer-aided design (TCAD) simulation. The device performance tended to degrade with an increasing number of grains, and the direction of the grains significantly affected the device performance. The large decrease in the electron density of the channel region due to the direction of the grains can be explained according to the formation of the depletion region.