Enhancement of the Electrical Characteristics for 3D NAND Flash Memory Devices Due to a Modified Cell Structure in the Gate Region
Yeon Gyu Lee, Hyun Soo Jung, Tae Whan Kim · Journal of Nanoscience and Nanotechnology · 2019
memory device with a modified cell structure was reduced due to an increase in the electron density of the inversion layer in comparison with conventional 3D flash memory devices, and their program operation was enhanced by the increased electric field. Furthermore, the program/erase margin of the proposed 3D NAND flash memory device was 15% larger than that of the conventional 3D NAND flash memory device.