Features of the model of main functional failures of digital CMOS VLSIs under the action of ionizing radiation
V. M. Barbashov, N. S. Trushkin · IOP Conference Series Materials Science and Engineering · 2019
Annotation. The methods of functional-logical modeling of very large digital integrated circuits (VLSI) under the influence of ionizing radiation are considered. It is shown that the multiplicity of the node and the power of the spectrum are more accurately described when using the concept of fuzzy multiplicity. Methods are proposed for predicting LSI failures when exposed to ionizing radiation, which are based on the model of fuzzy digital and probabilistic reliability automata.