Defining a high-level programming model for emerging NVRAM technologies
Thomas Shull, Jian Huang, Josep Torrellas · 2018
Byte-addressable non-volatile memory is poised to become prevalent in the near future. Thanks to device-level technological advances, hybrid systems of traditional dynamic random-access memory (DRAM) coupled with non-volatile random-access memory (NVRAM) are already present and are expected to be commonplace soon. NVRAM offers orders of magnitude performance improvements over existing storage devices. Due to NVRAM's low overheads, many future applications are expected to leverage the fine-grain durable storage provided by NVRAM.