Scaling of Split-Gate Flash Memory with 1.05V Select Transistor for 28 nm Embedded Flash Technology
Nhan Do, Jun-X. Yang, Yi Jun Sheng, Chien‐Sheng Su, Mingyue Wu, Haowei Ouyang, Huili Liang, Santosh Hariharan, Mandana Tadayoni, Joseph Wayne Norman, Tuấn Anh Vũ, A. Ly, Suck Won Hong, H. Tran, Vipin Tiwari, Changke Chen, Tengfei Ou, C.C. Shih · 2018
This paper discusses the performance and reliability of the third generation split-gate flash memory cell (ESF3) successfully embedded in a high performance and low power 28 nm logic process technology. The scaling of the 1.05V select transistor is demonstrated with the excellent program and erase efficiency and the 1M program/erase (P/E) cycle endurance capability. The silicon result of a 4Mb test chip and a 32Mb design will be also be shown.