RADIATING RESISTANCE OF THE PLANAR TRANSISTOR TEMPERATURE-SENSITIVE SENSORS
Ш. Д. Курмашев, Иван Михайлович Викулин · Sensor Electronics and Microsystem Technologies · 2011
Investigated dependence of forward bias U and amplification from size of streamselectrons, neutrons and — quanta, and also influence of effective concentration impurity in base area and thickness of base on radiating resistance transistor temperature-sensitive sensors. Influence of annealing of the irradiated structures on restoration of sensitive parameters was studied. It is shown that degradation of sensitive parameters under the influence of an irradiation begins at doses on 1.5 … 2 order above, than amplification. Degree of degradation U and depends on theconstructive-technological parameters of transistors.