THE USAGE OF DYNAMIC CAPACITOR METHOD IN THE SEMICONDUCTOR SENSORS AND ACTUATORS
Ю. С. Жарких, С. В. Лисоченко, О. В. Третяк · Sensor Electronics and Microsystem Technologies · 2013
The appllying of dynamic capacitor method for determination of the insulator-semiconductor system charge state was considered. By calculations was found, that the measured capacitor voltage value has a simple proportional relationship with the charge localized on the dielectric surface. This conclusion was confirmed in the experiments of the controlled charge sedimentation on the Si-SiO2 structures. Examples of the method usage are given for: - determining of the charge magnitude and sign which localized on the dielectric layer surface; - the magnitude of the surface photo-EMF and the conditions of its geneses; - studies of the adsorption-desorption processes kinetics. It is shown, that the dynamic capacitor method can be effectively applied in the researches of the new basic sensor elements and the development of the ways for improving the characteristics of the photo-EMF sources. The method allows predict the possibilities of obtaining the required devices characteristics at the early stages of the process of its creating.