A new 3D NAND flash structure to improve program/erase operation speed
Bo Wang, Bin Gao, Huaqiang Wu, He Qian · 2017
This paper presents an optimized doping strategy for vertical-channel three-dimensional (3D) NAND flash. This NAND flash is junction-free without dopant inside the string. Source side near SSL and drain side near GSL are both n-doped junction, providing electron in +FN programming. P-doped substrate provides hole in -FN erasing [1]. Carrier source in both program and erase does not depend on GIDL carrier generation, giving a faster programming and erasing speed than conventional structure.