A content addressable memory with multi-Vdd scheme for low power tunable operation
Siddhartha Joshi, Dawei Li, Seda Ogrenci-Memik, Grzegorz W. Deptuch, J. Hoff, S. Jindariani, Tiehui Liu, J. Olsen, Nhan Viet Tran · 2017
This paper reports on a content addressable memory (CAM) employing a multi-Vdd scheme for low power pattern recognition applications. The complete design, simulation and testing of the chip is presented along with an exploration of the multi-Vdd design space. The proposed design, operating at an optimal operating point in a triple-Vdd configuration, increases the delay range by 2.4 times and consumes 25.3% less power when compared to a conventional single-Vdd design operating over the same voltage range. Measurement results from a 246 kb test chip fabricated in 130nm Global Foundries Low Power CMOS technology are presented to validate the model and analysis.