The effect of power supply ramp time on SRAM PUFs
Abdelrahman Tarief Elshafiey, Payman Zarkesh-Ha, Joshua Trujillo · 2017
In this paper, for the first time, it is demonstrated that the start-up value of an SRAM PUF could be different depending on the SRAM power supply rising time. An analytical model has been developed to determine the range for the power supply ramp time that affects the SRAM PUF start-up value. It has been found that there are two regions of operation. As a result, the generated key could possibly be different from one region to another. An SRAM test chip was designed and fabricated using Tower Jazz's 180 nanometer Silicon Germanium (SiGe) Bipolar/CMOS (BiCMOS) process. Based on our measured data, using the appropriate rising time can decrease the number of flipping bits by 5%. Both simulation and silicon results confirms the analytical model.