An investigation of program disturb characteristics and data pattern effect in 128G 3D NAND flash memories
Yu-Hung Yeh, Sheng-Hung Shih, Jen-Chien Fu, Chrong Jung Lin, Ya‐Chin King · 2017
This work investigates program disturb characteristics on cells closely packed in three-dimensional (3D) NAND flash memories. Using firmware accessing 3D NAND chips, experimental data reveal unique behaviors on the cells susceptible to program disturb. These observations provide guidelines for future optimization in data arrangement and array operations in 3D NAND arrays.