1/f noise as indicator of quality of power transistors
Alicja K. Konczakowska · AIP conference proceedings · 1993
The methodology of investigations enabling the classification of power bipolar transistors into groups, depend on their expected quality, based on their 1/f noise is presented. It has been proposed to divide the low frequency noise generated by power transistors into a natural (essential) and a redundant noise. Transistors generating both a natural and a redundant noise are mismanufactured. The analysis of natural sources of noise and importance of a choice of measurement noise conditions were presented.