The properties of an asymmetric Gaussian potential quantum well qubit in RbCl crystal
Yong Sun, Xiu-Juan Miao, Zhao-Hua Ding, Jing‐Lin Xiao · Journal of Semiconductors · 2017
With the circumstance of the electron strongly coupled to LO-phonon and using the variational method of Pekar type (VMPT), we study the eigenenergies and the eigenfunctions (EE) of the ground and the first excited states (GFES) in a RbCl crystal asymmetric Gaussian potential quantum well (AGPQW). It concludes: (i) Two-energy-level of the AGPQW may be seen as a qubit. (ii) When the electron located in the superposition state of the two-energy-level system, the time evolution and the coordinate changes of the electron probability density oscillated periodically in the AGPQW with every certain period fs. (iii) Due to the confinement that is a two dimensional x − y plane symmetric structure in the AGPQW and the asymmetrical Gaussian potential (AGP) in the AGPQW growth direction, the electron probability density presents only one peak configuration located in the coordinate of z > 0, whereas it is zero in the range of z 0.24 nm and it takes a minimum value in R = 0.24 nm.