Temperature Dependence According to Grain Boundary Potential Barrier Variation in Vertical NAND Flash Cell with Polycrystalline-Silicon Channel
Hyung Jun Yang, Young Taek Oh, Kyu-Beom Kim, Jun Young Kweon, Gae Hun Lee, Eun Seok Choi, Sung Kye Park, Yun Heub Song · Journal of Nanoscience and Nanotechnology · 2017
We investigate the electrical characteristics according to changing temperature on trap distribution in the energy gap of grain boundary (GB) and interface trap density (D(it)) between polycrystalline-silicon (poly-Si) channel and tunnel oxide in Vertical NAND (VNAND) flash cell with poly-Si channel. We confirmed that there are two factors changing GB potential barrier height such as trap distribution in GB and D(it) using technology computer-aided design (TCAD) simulation. Also, we found that the electrical characteristics according to changing temperature are significantly dependent on height and position of GB potential barrier in VNAND flash cell with poly-Si channel. We expect that it is required to develop more accurate extraction method for trap distribution in each GB and D(it) for better understanding temperature dependence of electrical characteristics in VNAND Flash cell.