On the Restore Time Variations of Future DRAM Memory
Xianwei Zhang, Youtao Zhang, Bruce R. Childers, Jun Yang · ACM Transactions on Design Automation of Electronic Systems · 2017
As the de facto main memory standard, DRAM (Dynamic Random Access Memory) has achieved dramatic density improvement in the past four decades, along with the advancements in process technology. Recent studies reveal that one of the major challenges in scaling DRAM into the deep sub-micron regime is its significant variations on cell restore time, which affect timing constraints such as write recovery time. Adopting traditional approaches results in either low yield rate or large performance degradation. In this article, we propose schemes to expose the variations to the architectural level. By constructing memory chunks with different access speeds and, in particular, exploiting the performance benefits of fast chunks, a variation-aware memory controller can effectively mitigate the performance loss due to relaxed timing constraints. We then proposed restore-time-aware rank construction and page allocation schemes to make better use of fast chunks. Our experimental results show that, compared to traditional designs such as row sparing and Error Correcting Codes, the proposed schemes help to improve system performance by about 16% and 20%, respectively, for 20nm and 14nm technology nodes on a four-core multiprocessor system.