Polar code-based error correction code scheme for NAND flash memory applications
Haochuan Song, Chuan Zhang, Shunqing Zhang, Xiaohu You · 2016
With the development of flash technology, multilevel per cell (MLC) NAND flash memory has mastered the key market because of its storage capacity superiority. However, excessive density increment leads to decay of reliability of MLC NAND flash memory, thus an appropriate error correction code (ECC) is required to address this issue. This paper presents an efficient multi-strategy ECC scheme called pre-check scheme which consists of hard, quantized-soft, and pure-soft decoders geared to MLC NAND flash memory based on polar code proposed by E. Arikan to overcome the aforementioned drawbacks with better performance and lower complexity. The hard decoder is designed to correct the majority of erroneous codewords in the initial phase of the flash memory, while the soft decoders aim to correct codewords which contain larger amount of errors. In addition, we clarify that the mapping scheme using Gray code can achieve best performance compared to other alternatives.